Relaxed SiGe Layers With High Ge Content by Compliant Substrates
- 著者名:
Yin, H. Peterson, R. L. Hobart, K. D. Shieh, S. R. Duffy, T. S. Sturm, J. C. - 掲載資料名:
- CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 765
- 発行年:
- 2003
- 開始ページ:
- 147
- 終了ページ:
- 152
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997028 [1558997024]
- 言語:
- 英語
- 請求記号:
- M23500/765
- 資料種別:
- 国際会議録
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10
国際会議録
Impact of the Ge Content on the Radiation Hardness of Heterojunction Diodes in SiGe Strained Layers
MRS - Materials Research Society |
Electrochemical Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
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