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Relaxation of SiGe Films for the Fabrication of Strained Si Devices

著者名:
Maa, J. S.
Tweet, D. J.
Lee, J. J.
Hsu, S. T.
Fujii, K.
Naka, T.
Ueda, T.
Baba, T.
Awaya, N.
Sakiyama, K.
さらに 5 件
掲載資料名:
CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
765
発行年:
2003
開始ページ:
135
終了ページ:
140
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997028 [1558997024]
言語:
英語
請求記号:
M23500/765
資料種別:
国際会議録

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1 国際会議録 Relaxation of SiGe Films for the Fabrication of Strained Si Devices

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