Scalability of MOCVD-Deposited Hafnium Oxide | 東京工業大学附属図書館文献データベース

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Scalability of MOCVD-Deposited Hafnium Oxide

著者名:

Elshocht, S. Van

さらに 13 件

掲載資料名:

CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

765

発行年:

2003

開始ページ:

59

終了ページ:

64

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997028 [1558997024]

言語:

英語

請求記号:

M23500/765

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014423
シリーズID:	PA00000011
会議名:	Symposium on CMOS front-end materials and process technology
回次:	2003
会議開催地:	San Francisco, CA, USA
会議開催年:	2003.04.22-2003.04.24

類似資料:

1 国際会議録 Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon Elshocht, S.Van, Caymax, M., Gendt, S.De, Conard, T., Petry, J., Claes, M., Witters, T., Zhao, C., Brijs, B., Richard, … Materials Research Society	7 国際会議録 Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD Elshocht, S.Van, Brijs, B., Caymax, M., Conard, T., Gendt, S.De, Kubicek, S., Meuris, M., Onsia, B., Richard, O., … Materials Research Society
2 国際会議録 The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration Kaushik, V. S., DeGendt, S., Carter, R., Claes, M., Rohr, E., Pantisano, L., Kluth, J., Kerber, A., Cosnier, V., … Materials Research Society	8 国際会議録 Growth Studies and Reaction Mechanism of the Atomic Layer Deposition of Hafnium Oxide A. Debbie, M. Caymax, S. Brijs, D. Brunco, T. Conard, E. Sleeckx, L. Ragnarsson, S. Van Elshocht, S. De Gendt, M. Heyns Electrochemical Society
3 国際会議録 The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration Kaushik, V.S., Gendt, S.De, Carter, R., Claes, M., Rohr, E., Pantisano, L., Kluth, J., Kerber, A., Cosnier, V., Cartier, … Materials Research Society	9 国際会議録 Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation V. S. Kaushik, K. Rohr, S. Hyun, S. De Gendt, S. Van Elshocht, A. Debbie, J. Everoert, A. Veboso, S. Brus, L. … Electrochemical Society
4 国際会議録 Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications Kaushik, V., De Gendt, S., Caymax, M., Young, E., Rohr, E., Van Elshocht, S., Delabie, A., Claes, M., Shi, X., Chen, I., … Electrochemical Society	10 国際会議録 INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION Tsai, W., Chen, I., Carter, R., Cartier, E., Kluth, J., Richard, O., Claes, M., Lin, Y.M., Nohira, H., Conard, T., … Electrochemical Society
5 国際会議録 High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies Caymax, Matty, Bender, H., Brijs, B., Conard, T., Gendt, S. De, Delabie, A., Heyns, M., Onsia, B., Ragnarsson, L., … Materials Research Society	11 国際会議録 INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION Tsai, W., Chen, I., Carter, R., Cartier, E., Kluth, J., Richard, O., Claes, M., Lin, Y.M., Nohira, H., Conard, T., … Electrochemical Society
6 国際会議録 Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD Elshocht, S.Van, Brijs, B., Caymax, M., Conard, T., Gendt, S.De, Kubicek, S., Meuris, M., Onsia, B., Richard, O., … Materials Research Society	12 国際会議録 INTEGRATION OF HIGH-k GATE DIELECTRICS - WET ETCH CLEANING AND SURFACE CONDITIONING De Gendt, S., Beckx, S., Caymax, M., Claes, M., Conard, T., Delabie, A., Deweerd, W., Hellin, D., Kraus, H., Onsia, B., … Electrochemical Society

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