Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface | 東京工業大学附属図書館文献データベース

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Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

著者名:

Abernathy, C. R.

さらに 10 件

掲載資料名:

New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

764

発行年:

2003

開始ページ:

291

終了ページ:

304

総ページ数:

14

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997011 [1558997016]

言語:

英語

請求記号:

M23500/764

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014422
シリーズID:	PA00000011
会議名:	Symposium on new applications for wide-bandgap semiconductors
回次:	2003
会議開催地:	San Francisco, CA, USA
会議開催年:	2003.04.22-2003.04.24

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1 国際会議録 Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors Abernathy, C.R., Gila, B.P., Onstine, A.H., Pearton, S.J., Kim, J., Luo, B., Mehandru, R., Ran, F., Gillespie, J.K., … Electrochemical Society	7 国際会議録 Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics Gila, B.P., Luo, B., Kim, J., Mehandru, R., LaRoche, J.R., Onstine, A.H., Abernathy, C.R., Ren, F., Pearton, S.J. Electrochemical Society
2 国際会議録 Dramatic Improvements in AIGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment Moser, N., Fitch, R., Via, D., Crespo, A., Yannuzzi, M., Jessen, G., Gillespie, J., Luo, B., Ren, F., Abernathy, C., … Electrochemical Society	8 国際会議録 The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation Gila, B. P., Luo, B., Kim, J., Mehandru, R., LaRoche, J. R., Onstine, A. H., Lambers, E., Siebein, K., Abernathy, C. R., … Materials Research Society
3 国際会議録 Surface Passivation of AlGaN Terminated and GaN Terminated HEMT Structures Studied by XPS Gila, B.P., Lambers, E., Luo, B., Onstine, A.H., Allums, K.K., Abernathy, C.R., Ren, F., Pearton, S.J. Materials Research Society	9 国際会議録 Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide Mehandru, R., Gila, B.P., Kim, J., Johnson, J.W., Lee, K.P., Luo, B., Onstine, A.H., Abernathy, C.R., Pearton, S.J., … Materials Research Society
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