Optical and Structural Investigation of AIN Grown on Sapphire With Reactive MBE Using RF Nitrogen or Ammonia

Optical and Structural Investigation of AIN Grown on Sapphire With Reactive MBE Using RF Nitrogen or Ammonia

著者名:

Yun, F.

掲載資料名:

New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

764

発行年:

2003

開始ページ:

165

終了ページ:

170

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997011 [1558997016]

言語:

英語

請求記号:

M23500/764

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014422
シリーズID:	PA00000011
会議名:	Symposium on new applications for wide-bandgap semiconductors
回次:	2003
会議開催地:	San Francisco, CA, USA
会議開催年:	2003.04.22-2003.04.24

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