Formation Energies of Point Defects in Copper Indium Diselenide Using Ab Initio Methods

Formation Energies of Point Defects in Copper Indium Diselenide Using Ab Initio Methods

著者名:

掲載資料名:

Compound semiconductor photovoltaics : symposium held April 22-25, 2003, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

763

発行年:

2003

開始ページ:

347

終了ページ:

352

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997004 [1558997008]

言語:

英語

請求記号:

M23500/763

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014421
シリーズID:	PA00000011
会議名:	Symposium on compound semiconductor photovoltaics
回次:	2003
会議開催地:	San Francisco, CA, USA
会議開催年:	2003.04.22-2003.04.25

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