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High-Rate (＞ 1nm/s) and Low-Temperature (＜ 400℃) Deposition of Silicon Nitride Using an N2/SiH4 and NH3/SiH4 Expanding Thermal Plasma

著者名:
掲載資料名:
Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22-25, 2003, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
762
発行年:
2003
開始ページ:
169
終了ページ:
174
総ページ数:
6
出版情報:
Warrendale: Materials Research Society
ISSN:
02729172
ISBN:
9781558996991 [1558996990]
言語:
英語
請求記号:
M23500/762
資料種別:
国際会議録

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