The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration

The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration

著者名:

掲載資料名:

Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

747

発行年:

2003

開始ページ:

145

終了ページ:

152

総ページ数:

8

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558996847 [1558996842]

言語:

英語

請求記号:

M23500/747

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014407
シリーズID:	PA00000011
会議名:	Symposium on crystalline oxide-silicon heterostructures and oxide optoelectronics
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.04

類似資料:

1 国際会議録 The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration Kaushik, V.S., Gendt, S.De, Carter, R., Claes, M., Rohr, E., Pantisano, L., Kluth, J., Kerber, A., Cosnier, V., Cartier, … Materials Research Society	7 国際会議録 INTEGRATION OF HIGH-k GATE DIELECTRICS - WET ETCH CLEANING AND SURFACE CONDITIONING De Gendt, S., Beckx, S., Caymax, M., Claes, M., Conard, T., Delabie, A., Deweerd, W., Hellin, D., Kraus, H., Onsia, B., … Electrochemical Society
2 国際会議録 Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications Kaushik, V., De Gendt, S., Caymax, M., Young, E., Rohr, E., Van Elshocht, S., Delabie, A., Claes, M., Shi, X., Chen, I., … Electrochemical Society	8 国際会議録 HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle L. Nyns, A. Delabie, M. Caymax, M.M. Heyns, S. Van Elshocht Electrochemical Society
3 国際会議録 INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION Tsai, W., Chen, I., Carter, R., Cartier, E., Kluth, J., Richard, O., Claes, M., Lin, Y.M., Nohira, H., Conard, T., … Electrochemical Society	9 国際会議録 Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation V. S. Kaushik, K. Rohr, S. Hyun, S. De Gendt, S. Van Elshocht, A. Debbie, J. Everoert, A. Veboso, S. Brus, L. … Electrochemical Society
4 国際会議録 INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION Tsai, W., Chen, I., Carter, R., Cartier, E., Kluth, J., Richard, O., Claes, M., Lin, Y.M., Nohira, H., Conard, T., … Electrochemical Society	10 国際会議録 ALD HfO2 Surface Preparation Study Delabie, Annelies, Caymax, M., Maes, J.W., Bajolet, P., Brijs, B., Cartier, E., Conard, T., Gendt, S.De, Richard, O., … Materials Research Society
5 国際会議録 Scalability of MOCVD-Deposited Hafnium Oxide Elshocht, S. Van, Carter, R., Caymax, M., Claes, M., Conard, T., Date, L., Gendt, S. De, Kaushik, V., Kerber, A., Kluth, … Materials Research Society	11 国際会議録 Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon Elshocht, S.Van, Caymax, M., Gendt, S.De, Conard, T., Petry, J., Claes, M., Witters, T., Zhao, C., Brijs, B., Richard, … Materials Research Society
6 国際会議録 13 High-k Gate Stack Engineering - towards Meeting Low Standby Power and High Performance Targets De Gendt, S., Brunco, D., Caymax, M., Canard, T., Date, L., Delabie, A., Deweerd, W., Groeseneken, G., Houssa, M., Hyun, … Electrochemical Society	12 国際会議録 High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies Caymax, Matty, Bender, H., Brijs, B., Conard, T., Gendt, S. De, Delabie, A., Heyns, M., Onsia, B., Ragnarsson, L., … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12