Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon | 東京工業大学附属図書館文献データベース

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Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon

著者名:

Elshocht, S.Van

Vandervorst, W.

さらに 12 件

掲載資料名:

Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

745

発行年:

2003

開始ページ:

197

終了ページ:

202

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996823 [1558996826]

言語:

英語

請求記号:

M23500/745

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014405
シリーズID:	PA00000011
会議名:	Symposium on novel materials and processes for advances CMOS
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.04

類似資料:

1 国際会議録 Scalability of MOCVD-Deposited Hafnium Oxide Elshocht, S. Van, Carter, R., Caymax, M., Claes, M., Conard, T., Date, L., Gendt, S. De, Kaushik, V., Kerber, A., Kluth, … Materials Research Society	7 国際会議録 Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications Kaushik, V., De Gendt, S., Caymax, M., Young, E., Rohr, E., Van Elshocht, S., Delabie, A., Claes, M., Shi, X., Chen, I., … Electrochemical Society
2 国際会議録 Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD Elshocht, S.Van, Brijs, B., Caymax, M., Conard, T., Gendt, S.De, Kubicek, S., Meuris, M., Onsia, B., Richard, O., … Materials Research Society	8 国際会議録 ALD HfO2 Surface Preparation Study Delabie, Annelies, Caymax, M., Maes, J.W., Bajolet, P., Brijs, B., Cartier, E., Conard, T., Gendt, S.De, Richard, O., … Materials Research Society
3 国際会議録 Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD Elshocht, S.Van, Brijs, B., Caymax, M., Conard, T., Gendt, S.De, Kubicek, S., Meuris, M., Onsia, B., Richard, O., … Materials Research Society	9 国際会議録 INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION Tsai, W., Chen, I., Carter, R., Cartier, E., Kluth, J., Richard, O., Claes, M., Lin, Y.M., Nohira, H., Conard, T., … Electrochemical Society
4 国際会議録 Physcial Characterization of Ultrathin High-k Dielectrics Vandervorst, W., Brijs, B., Bender, H., Conard, O.T., Petry, J., Richard, O., Elshocht, S.Van, Delabie, A., Caymax, M., … Materials Research Society	10 国際会議録 INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION Tsai, W., Chen, I., Carter, R., Cartier, E., Kluth, J., Richard, O., Claes, M., Lin, Y.M., Nohira, H., Conard, T., … Electrochemical Society
5 国際会議録 High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies Caymax, Matty, Bender, H., Brijs, B., Conard, T., Gendt, S. De, Delabie, A., Heyns, M., Onsia, B., Ragnarsson, L., … Materials Research Society	11 国際会議録 INTEGRATION OF HIGH-k GATE DIELECTRICS - WET ETCH CLEANING AND SURFACE CONDITIONING De Gendt, S., Beckx, S., Caymax, M., Claes, M., Conard, T., Delabie, A., Deweerd, W., Hellin, D., Kraus, H., Onsia, B., … Electrochemical Society
6 国際会議録 Growth Studies and Reaction Mechanism of the Atomic Layer Deposition of Hafnium Oxide A. Debbie, M. Caymax, S. Brijs, D. Brunco, T. Conard, E. Sleeckx, L. Ragnarsson, S. Van Elshocht, S. De Gendt, M. Heyns Electrochemical Society	12 国際会議録 Thermal Stability of High-k Layers Zhao, C., Cosnier, V., Chen, P.J., Richard, O., Roebben, G., Maes, J., Elshocht, S.Van, Bender, H., Young, E., Biest, … Materials Research Society

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