Physical and Electrical Properties of Al2O3, HfO2, and Their Alloy Films Prepared by Atomic Layer Deposition for 65nm CMOS Gate Dielectric | 東京工業大学附属図書館文献データベース

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Physical and Electrical Properties of Al2O3, HfO2, and Their Alloy Films Prepared by Atomic Layer Deposition for 65nm CMOS Gate Dielectric

著者名:

Kawahara, Takaaki

Torii, Kazuyoshi

Fukuda, Seiichi

Horiuchi, Atsushi

Kato, Yoshitake

Kitajima, Hiroshi

さらに 4 件

掲載資料名:

Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

745

発行年:

2003

開始ページ:

155

終了ページ:

160

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996823 [1558996826]

言語:

英語

請求記号:

M23500/745

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014405
シリーズID:	PA00000011
会議名:	Symposium on novel materials and processes for advances CMOS
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.04

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