Characterization of Ruthenium and Ruthenium Oxide Thin Films Deposited by Chemical Vapor Deposition for CMOS Gate Electrode Applications

Characterization of Ruthenium and Ruthenium Oxide Thin Films Deposited by Chemical Vapor Deposition for CMOS Gate Electrode Applications

著者名:

掲載資料名:

Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

745

発行年:

2003

開始ページ:

61

終了ページ:

66

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996823 [1558996826]

言語:

英語

請求記号:

M23500/745

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014405
シリーズID:	PA00000011
会議名:	Symposium on novel materials and processes for advances CMOS
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.04

類似資料:

1 国際会議録 Interface Quality and Electrical Performance of Low-Temperature Metal Organic Chemical Vapor Deposition Aluminum Oxide Thin Films for Advanced CMOS Gate … Skordas, Spyridon, Papadatos, Filippos, Consiglio, Steven, Eisenbraun, Eric, Kaloyeros, Alain Materials Research Society	7 国際会議録 Optimization Of Ultrathin ALD Tantalum Nitride Films For Zero-Thickness Liner Applications Straten, Oscar van der, Zhu, Yu, Eisenbraun, Eric, Kaloyeros, Alain Materials Research Society
2 国際会議録 Low Temperature Metal Organic Chemical Vapor Deposition Of Aluminum Oxide Thin Films For Advanced CMOS Gate Dielectric Applications Skordas, Spyridon, Papadatos, Filippos, Patel, Zubin, Nuesca, Guillermo, Eisenbraun, Eric, Gusev, Evgeni, Kaloyeros, … Materials Research Society	8 国際会議録 Chemical Vapor Deposition of Novel Precursors for Advanced Capacitor Electrodes Peck, J., Hoover, C.A., Atwood, J.D., Hoth, D.C., Cansiglio, S., Papadatos, F., Eisenbraun, E. Electrochemical Society
3 国際会議録 Chemical Vapor Deposition of Ru and RuO2 for Gate Electrode Applications Papadatos, Filippos, Skordas, Spyriden, Patel, Zubin, Consiglio, Steven, Eisenbraun, Eric Materials Research Society	9 国際会議録 Thermal/Chemical Stability of ALD Ru-TaN Thin Films for Gate Electrode Applications M. Tungare, S. Kumar, M. Li, E. Eisenbraun Electrochemical Society
4 国際会議録 Low temperature thermal chemical vapor deposition of silicon nitride thin films for microelectronics applications Skordas, Spyridon, Sirinakis, George, Yu, Wen, Wu, Di, Efstathiadis, Haralabos, Kaloyeros, Alain E. MRS-Materials Research Society	10 国際会議録 The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications Cheng, Degang, Eisenbraun, Eric T. Materials Research Society
5 国際会議録 CHEMICAL VAPOR DEPOSITION ROUTE TO THE FABRICATION OF THIN FILMS OF HIGH TEMPERATURE OXIDE SUPERCONDUCTORS Kaloyeros, Alain E., Brooks, Kenneth C., Feng, Aiguo, Garhart, Jonathn Materials Research Society	11 国際会議録 Physical Properties and Diffusion Characteristics of CVD-Grown TiSiN Films Anjum, Dalaver, Dovidenko, Katharine, Oktyabrsky, Serge, Eisenbraun, Eric, Kaloyeros, Alain E. Materials Research Society
6 国際会議録 Silicon Nitride Films Deposited by Atmospheric Pressure Chemical Vapor Deposition Lin, Xian, Endisch, Denis, Chen, Xiaomeng, Kaloyeros, Alain, Arkles, Barry MRS - Materials Research Society	12 国際会議録 Ultra-Thin Zirconium Oxide Films Deposited by Rapid Thermal Chemical Vapor Deposition (RT-CVD) as Alternative Gate Dielectric Chang, Jane P., Lin, You-Sheng Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12