Growth and Characterization of Deep UV Emitter Structures Grown on Single Crystal Bulk AlN Substrates | 東京工業大学附属図書館文献データベース

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Growth and Characterization of Deep UV Emitter Structures Grown on Single Crystal Bulk AlN Substrates

著者名:

Schowalter, L.J.

さらに 6 件

掲載資料名:

GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

743

発行年:

2002

開始ページ:

439

終了ページ:

444

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996809 [155899680X]

言語:

英語

請求記号:

M23500/743

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014403
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.06

類似資料:

1 国際会議録 The Influence of Substrate Surface Polarity on Optical Properties of GaN Grown on Single Crystal Bulk AlN Tamulaitis, G., Yilmaz, I., Shur, M.S., Gaska, R., Chen, C., Yang, J., Kuokstis, E., Khan, A., Rojo, J.C., Schowalter, … Materials Research Society	7 国際会議録 Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiC Tamulaitis, G., Yilmaz, I., Shur, M.S., Gaska, R., Anderson, T. Trans Tech Publications
2 国際会議録 Stimulated Emission at 258 nm in AIN/AlGaN QuantumWells Grown on Bulk AIN Substrates Gaska, R., Fareed, Q., Tamulaitis, G., Yilmaz, I., Shur, M. S., Chen, C., Yang, J., Kuokstis, E., Khan, A., Rojo, J. C., … Materials Research Society	8 国際会議録 Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates Gaska,R., Shur,M.S., Yang,J.W., Osinsky,A., Orlov,A.O., Snider,G.L. Trans Tech Publications
3 国際会議録 Progress In The Preparation Of Aluminum Nitride Substrates From Bulk Crystals Rojo, J.C., Schowalter, L.J., Slack, Glen, Morgan, K., Barani, J., Schujman, S., Biswas, S., Raghothamachar, B., Dudley, … Materials Research Society	9 国際会議録 III-Nitride Based UV Light Emiting Diodes GASKA, R., KHAN, M. ASIF, SHUR, M. S. Kluwer Academic Publishers
4 国際会議録 High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates Knap, W., Borovitskaya, E., Shur, M. S., Gaska, R., Brandt, B., Maude, D., Frayssinet, E., Lorenzini, P., Grandjean, N., … Materials Research Society	10 国際会議録 Quaternary AllnGaN Materials System for UV Optoelectronics KUOKSTIS, E., TAMULAITIS, G., KHAN, M. ASIF Kluwer Academic Publishers
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6 国際会議録 Shaping of the band gap in AllnGaN alloys Tamulaitis,G., Jursenas,S., Kazlauskas,K., Zukauskas,A., Khan,M.Asif, Yang,J.W., Simin,G.S., Gaska,R., Shur,M.S. SPIE-The International Society for Optical Engineering	12 国際会議録 Quaternary AlInGaN MQWs for Ultraviolet LEDs Zhang, J.P., Yang, J.W., Adivarahan, V., Wang, H.M., Fareed, Q., Kuokstis, E., Chitnis, A., Shatalov, M., Simin, G., … Materials Research Society

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