GaN Epilayers and AlGaN/GaN Multiple Quantum Wells Grown on Freestanding [1100] Oriented GaN Substrates | 東京工業大学附属図書館文献データベース

Blank Cover Image

GaN Epilayers and AlGaN/GaN Multiple Quantum Wells Grown on Freestanding [1100] Oriented GaN Substrates

著者名:

Gallagher, J.J.

さらに 10 件

掲載資料名:

GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

743

発行年:

2002

開始ページ:

299

終了ページ:

304

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996809 [155899680X]

言語:

英語

請求記号:

M23500/743

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014403
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.06

類似資料:

1 国際会議録 Role of Polarization in the Photoluminescence of C- and M-Plane Oriented GaN/AlGaN Multiple Quantum Wells Kuokstis, E., Chen, C.Q., Gaevski, M.E., Sun, W.H., Yang, J.W., Simin, G., Khan, M.Asif, Maruska, H.P., Hill, D.W., … Materials Research Society	7 国際会議録 Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells Smith, M., Lin, J. Y., Jiang, H. X., Khan, A., Chen, Q., Salvador, A., Botchkarev, A., Morkoc, H. MRS - Materials Research Society
2 国際会議録 UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells Ryu, Mee-Yi, Chen, C.Q., Kuokstis, E., Yang, J.W., Simin, G., Khan, M. Asif, Sim, G.G., Yu, P.W. Materials Research Society	8 国際会議録 Persistent Photoconductivity in p-Type GaN Epilayers and n-Type AlGaN/GaN Heterostructures Li, J. Z., Lin, J. Y., Jiang, H. X., Khan, M. A., Chen, Q., Salvador, A., Botchkarev, A., Morkoc, H. MRS - Materials Research Society
3 国際会議録 Polarization Effects in the Photoluminescence of AlGaN and AlInGaN Based Quantum Well Structures Ryu, Mee-Yi, Kuokstis, E., Chen, C.Q., Zhang, J.P., Yang, J.W., Simin, G., Khan, M.Asif Materials Research Society	9 国際会議録 High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates Knap, W., Borovitskaya, E., Shur, M. S., Gaska, R., Brandt, B., Maude, D., Frayssinet, E., Lorenzini, P., Grandjean, N., … Materials Research Society
4 国際会議録 Metalorganic Chemical Vapor Deposition of Quarterary AlInGaN Multiple Quantum Well Structures for Deep Ultraviolet Emitters Yang, J.W., Chen, C.Q., Zhang, J.P., Fareed, Q., Wang, H.M., Ryu, M.-Y., Kuokstis, E., Simin, G., Khan, M.A. Materials Research Society	10 国際会議録 Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a-plane SiC Substrates Li, Jiawei, Gong, Zheng, Chen, Changqing, Adivarahan, Vinod, Gaevski, Mikhail, Kuokstis, Edmundas, Shatalov, Maxim, Gao, … Materials Research Society
5 国際会議録 Photoluminescence From Freestanding GaN With (1010) Orientation Reshchikov, M.A., Teke, A., Maruska, H.P., Hill, D.W., Mcrkoc, H. Materials Research Society	11 国際会議録 AlGaN/GaN HFETs and Insulated Gate HFETs DC and RF Stability Koudymov, Alexei, Saygi, Salih, Tipirneni, Naveen, Simin, Grigory, Adivarahan, Vinod, Yang, Jinwei, Khan, M. Asif Materials Research Society
6 国際会議録 Structural Properties of Free-Standing 50 mm Diameter GaN Wafers With (1010) Orientation Grown on LiAlO2 Jasinski, Jacek, Liliental-Weber, Zuzanna, Maruska, Herbert-Paul, Chai, Bruce H., Hill, David W., Chou, Mitch M. C., … Materials Research Society	12 国際会議録 Quaternary AlInGaN MQWs for Ultraviolet LEDs Zhang, J.P., Yang, J.W., Adivarahan, V., Wang, H.M., Fareed, Q., Kuokstis, E., Chitnis, A., Shatalov, M., Simin, G., … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12