Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on GaN by Plasma Assisted Gas Source Molecular Beam Epitaxy
- 著者名:
Onstine, A.H. Gila, B.P. Kim, J. Stodilka, D. Allums, K. Abernathy, C.R. Ren, F. Pearton, S.J. - 掲載資料名:
- GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 743
- 発行年:
- 2002
- 開始ページ:
- 285
- 終了ページ:
- 292
- 総ページ数:
- 8
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996809 [155899680X]
- 言語:
- 英語
- 請求記号:
- M23500/743
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
7
国際会議録
Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
3
国際会議録
Novel Oxides and Reliability for the Passivation of AlGaN/GaN High Electron Mobility Transistor
Electrochemical Society |
Materials Research Society |
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Materials Research Society |
12
国際会議録
Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide
Materials Research Society |