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Effect of Growth Temperature on the Microstructure of the Nucleation Layers of GaN Grown by MOCVD on (1120) Sapphire

著者名:
Wojtowicz, T.
Ruterana, P.
Twigg, M.E.
Henry, R.L.
Koleske, D.D.
Wickenden, A.E.
さらに 1 件
掲載資料名:
GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
743
発行年:
2002
開始ページ:
127
終了ページ:
132
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996809 [155899680X]
言語:
英語
請求記号:
M23500/743
資料種別:
国際会議録

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