Large-Area, Device Quality GaN on Si Using a Novel Transition Layer Scheme

Large-Area, Device Quality GaN on Si Using a Novel Transition Layer Scheme

著者名:

Rajagopal, Pradeep

掲載資料名:

GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

743

発行年:

2002

開始ページ:

3

終了ページ:

8

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996809 [155899680X]

言語:

英語

請求記号:

M23500/743

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014403
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.06

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