Aluminum and Boron Diffusion in 4H-SiC

Aluminum and Boron Diffusion in 4H-SiC

著者名:

掲載資料名:

Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

742

発行年:

2003

開始ページ:

291

終了ページ:

302

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996793 [1558996796]

言語:

英語

請求記号:

M23500/742

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014402
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.04

類似資料:

1 国際会議録 Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC Linnarsson, M.K., Janson, M.S., Shoner, A., Konstantinov, A., Svensson, B.G. Trans Tech Publications	7 国際会議録 In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates Linnarsson, M.K., Janson, M.S., Forsberg, U., Janzen, E. Trans Tech Publications
2 国際会議録 Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC Janson, M.S, Hallen, A., Linnarsson, M.K., Nordell, N., Karlsson, S., Svensson, B.G. Trans Tech Publications	8 国際会議録 Range Distributions of Implanted Ions in Silicon Carbide Janson, M.S., Linnarsson, M.K., Hallen, A., Svensson, B.G. Trans Tech Publications
3 国際会議録 Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth Linnarsson, M.K., Forsberg, U., Janson, M.S., Janzen, E., Svensson, B.G. Trans Tech Publications	9 国際会議録 Range Distributions of Implanted Ions in Silicon Carbide Janson, M.S., Linnarsson, M.K., Hallen, A., Svensson, B.G. Trans Tech Publications
4 国際会議録 Deuterium Incorporation in Acceptor Doped Epitaxial Layers of 6H-SiC Linnarsson,M.K., Janson,M., Schoner,A., Nordell,N., Karlsson,S., Svensson,B.G. Trans Tech Publications	10 国際会議録 Metal-Contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC Linnarsson, M. K., Spetz, A. Ll., Janson, M. S., Ekedahl, L. G., Karlsson, S., Schoner, A., Lundstrom, I., Svensson, B. … Trans Tech Publications
5 国際会議録 Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth Linnarsson, M.K., Forsberg, U., Janson, M., Janzen, E., Svensson, B.G. Trans Tech Publications	11 国際会議録 Ion Implantation Processing and Related Effects in SiC Svensson, B.G., Hallen, A., Wong-Leung, J., Janson, M.S., Linnarsson, M.K., Kuznetsov, A.Yu., Alfieri, G., Grossner, U., … Trans Tech Publications
6 国際会議録 Precipitate Formation in Heavily Al-Doped 4H-SiC Layers Linnarsson, M.K., Persson, P.O.A., Bleichner, H., Janson, M., Zimmermann, U., Andersson, H., Karlsson, S., Yakimova, R., … Trans Tech Publications	12 国際会議録 The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures Uneus, L., Nakagomi, S., Linnarsson, M., Janson, M.S., Svensson, B.G., Yakimova, R., Syvaejaervi, M., Henry, A., Janzen, … Trans Tech Publications

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