Extended Defects in 4H-SiC PiN Diodes

Extended Defects in 4H-SiC PiN Diodes

著者名:

Twigg, M.E.

掲載資料名:

Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

742

発行年:

2003

開始ページ:

199

終了ページ:

204

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996793 [1558996796]

言語:

英語

請求記号:

M23500/742

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014402
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.04

類似資料:

1 国際会議録 Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes Twigg, M.E., Stahlbush, R.E., Fatemi, M., Arthur, S.D., Fedison, J.B., Tucker, J.B., Wang, S. Trans Tech Publications	7 国際会議録 4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal Fedison, J.B., Cowen, C.S., Garrett, J.L., Downey, E.T., Kretchmer, J.W., Klinger, R.L., Peters, H.C., Tucker, J.B., … Trans Tech Publications
2 国際会議録 Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes Stahlbush, R.E., Fedison, J.B., Arthur, S.D., Rowland, L.B., Kretchmer, J.W., Wang, S. Trans Tech Publications	8 国際会議録 Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, M.J. O'Loughlin, A.A. Burk Trans Tech Publications
3 国際会議録 Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes Stahlbush, R., Fedison, J.B., Arthur, S.D., Rowland, L.B., Kretchmer, J.W., Wang, S. Trans Tech Publications	9 国際会議録 Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy N.A. Mahadik, R.E. Stahlbush, S.B. Qadri, O.J. Glembocki, D.A. Alexson Trans Tech Publications
4 国際会議録 Overlapping Shockley/Frank Faults in 4F-SiC PiN Diodes Twigg, M.E., Stahlbush, R.E., Losee, P.A., Li, C.H., Bhat, I.B., Chow, T.P. Trans Tech Publications	10 国際会議録 Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes R.E. Stahlbush, Q.C.J. Zhang, A.K. Agarwal, N.A. Mahadik Trans Tech Publications
5 国際会議録 Mechanisms of Stacking Fault Growth in SiC PiN Diodes Stahlbush, R.E., Twigg, M.E., Sumakeris, J.J., Irvine, K.G., Losee, P.A. Materials Research Society	11 国際会議録 Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films Losee, P. A., Li, C., Seiler, J., Stahlbush, R. E., Chow, T. P., Bhat, I. B., Gutmann, R. J. Trans Tech Publications
6 国際会議録 Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes Stahlbush, R.E., Twigg, M.E., Irvine, K.G., Sumakeris, J.J., Chow, T.P., Losee, P.A., Zhu, L., Tang, Y., Wang, W. Trans Tech Publications	12 国際会議録 Influence of Temperature on the Saturation of the Forward Voltage Drift in SiC Pin Diodes J.D. Caldwell, R. Stahlbush, O. Glembocki, K. Hobart Electrochemical Society

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