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Effects of Structural Defects on Diode Properties in 4H-SiC

著者名:
Skromme, B.J.
Palle, K.C.
Mikhov, M.K.
Meidia, H.
Mahajan, S.
Huang, X.R.
Vetter, W.M.
Dudley, M.
Moore, K.
Smith, S.
Gehoski, T.
さらに 6 件
掲載資料名:
Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
742
発行年:
2003
開始ページ:
181
終了ページ:
186
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996793 [1558996796]
言語:
英語
請求記号:
M23500/742
資料種別:
国際会議録

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