Ion Implantation Induced Deep Defects in n-Type 4H-Silicon Carbide

Ion Implantation Induced Deep Defects in n-Type 4H-Silicon Carbide

著者名:

掲載資料名:

Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

742

発行年:

2003

開始ページ:

175

終了ページ:

180

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996793 [1558996796]

言語:

英語

請求記号:

M23500/742

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014402
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.04

類似資料:

1 国際会議録 Ion Implantation and 1 MeV Electron Irradiation of 4H-SiC-Comparison Studies Evwaraye, A.O., Smith, S.R., Mitchel, W.C., Farlow, G.C., Capano, M.A. Materials Research Society	7 国際会議録 Deep Levels in SiC:V by High Temperature Transport Measurements Mitchel,W.C., Perrin,R., Goldstein,J., Roth,M., Ahoujja,M., Smith,S.R., Evwaraye,A.O., Solomon,J.S., Landis,G., … Trans Tech Publications
2 国際会議録 The Effect of Annealing on High-Resistivity and Semi-Insulating 4H-SiC Smith, S.R., Evwaraye, A.O., Mitchel, W.C. Materials Research Society	8 国際会議録 Thermal activation energies for the three inequivalent lattice sites for the BSi acceptor in 6H-SiC Evwaraye,A.O., Smith,S.R., Mitchel,W.C., Hobgood,H.McD., Augustine,G., Balakrishna,V. Trans Tech Publications
3 国際会議録 Phonon Speetrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance Spectroscopy Smith,S.R., Evwaraye,A.O., Mitchel,W.C. Trans Tech Publications	9 国際会議録 Study of Deep Levels by Admittance Spectroscopy in High Resistivity P-Type 6H-SiC Single Crystals Evwaraye, A. O., Smith, S. R., Mitchel, W. C. MRS - Materials Research Society
4 国際会議録 Electrical and Optical Properties of Defects in n-Type 4H-SiC Evwaraye, A. O., Smith, S. R., Mitchel, W. C. MRS - Materials Research Society	10 国際会議録 Impurity Conduction in n-Type 4H-SiC Evwaraye, A. O., Smith, S. R., Mitchel, W. C., Roth, M. D. MRS - Materials Research Society
5 国際会議録 Deep Level near Ec - 0.55 eV in Undoped 4H-SiC Substrates Mitchel, W.C., Mitchell, W.D., Smith, S.R., Landis, G., Evwaraye, A.O., Fang, Z.Q., Look, D.C., Sizelove, J.R. Trans Tech Publications	11 国際会議録 CHARACTERIZATION OF DEFECTS IN N-TYPE 6H-SiC SINGLE CRYSTALS BY OPTICAL ADMITTANCE SPECTROSCOPY Evwaraye, A. O., Smith, S. R., Mitchel, W. C. MRS - Materials Research Society
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