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Ion Implantation Induced Deep Defects in n-Type 4H-Silicon Carbide

著者名:
掲載資料名:
Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
742
発行年:
2003
開始ページ:
175
終了ページ:
180
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996793 [1558996796]
言語:
英語
請求記号:
M23500/742
資料種別:
国際会議録

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