Epitaxial Silicon Carbide Simulations vs. Experiments: Etching, Growth Rates and Aluminum/Nitrogen Doping

Epitaxial Silicon Carbide Simulations vs. Experiments: Etching, Growth Rates and Aluminum/Nitrogen Doping

著者名:

Meziere, Jerome

掲載資料名:

Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

742

発行年:

2003

開始ページ:

29

終了ページ:

34

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996793 [1558996796]

言語:

英語

請求記号:

M23500/742

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014402
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.04

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2 国際会議録 Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC Meziere, J., Pons, M., Dedulle, J.-M., Blanquet, E., Ferret, P., Di Cioccio, L., Billon, T. Trans Tech Publications	8 国際会議録 A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates Templier, Francois, Daval, Nicolas, Cioccio, Lea Di, Bourgeat, Daniel, Letertre, Fabrice, Planson, Dominique, Chante, … Materials Research Society
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