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Theoretical limit for the SiO2 thickness in silicon MOS devices

著者名:
掲載資料名:
Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment
シリーズ名:
NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号:
185
発行年:
2005
開始ページ:
309
終了ページ:
320
総ページ数:
12
出版情報:
Dordrecht: Kluwer Academic Publishers
ISBN:
9781402030116 [1402030118]
言語:
英語
請求記号:
N17050/185
資料種別:
国際会議録

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