A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

著者名:

Brosselard, P.

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

1005

終了ページ:

1008

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

類似資料:

1 国際会議録 Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor Brosselard, P., Zorngiebel, V., Planson, D., Scharnholz, S., Chante, J.P., Spahn, E., Raynaud, C., Lazar, M. Trans Tech Publications	7 国際会議録 Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes H. Vang, S. Scharnholz, C. Raynaud, M. Lazar, G. Pâques Trans Tech Publications
2 国際会議録 Fabrication and Characterisation of High-Voltage SiC-Thyristors Zorngiebel, V., Scharnholz, S., Spahn, E., Brosselard, P., Arssi, N., Chante, J.-P., Planson, D., Raynaud, C., … Trans Tech Publications	8 国際会議録 Parallel and Serial Association of SiC Light Triggered Thyristors N. Dheilly, G. Pâques, S. Scharnholz, D. Planson Trans Tech Publications
3 国際会議録 Pulse Current Characterization of SiC GTO Thyristors with Etched JTE S. Scharnholz, R. Hassdorf, G. Pâques, B. Vergne, D. Planson Trans Tech Publications	9 国際会議録 Pulse Characterization of Optically Triggered SiC Thyristors N. Dheilly, G. Pâques, S. Scharnholz, D. Planson Trans Tech Publications
4 国際会議録 Comparison of SiC Thyristors with Differently Etched JTEs G. Pâques, S. Scharnholz, N. Dheilly, D. Planson, R.W. De Doncker Trans Tech Publications	10 国際会議録 P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth Lazar, M., Jacquier, C., Dubois, C., Raynaud, C., Ferro, G., Planson, D., Brosselard, P., Monteil, Y., Chante, J. P. Trans Tech Publications
5 国際会議録 Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED N. Dheilly, G. Pâques, D. Planson, P. Bevilacqua, S. Scharnholz Trans Tech Publications	11 国際会議録 OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients D.M. Nguyen, C. Raynaud, M. Lazar, G. Pâques, S. Scharnholz Trans Tech Publications
6 国際会議録 1.2 kV Pin Diodes with SiCrystal Epiwafer H. Vang, C. Raynaud, P. Brosselard, M. Lazar, P. Cremillieu, J.L. Leclercq, S. Scharnholz, D. Planson, J. Chante Trans Tech Publications	12 国際会議録 Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current H. Hamad, C. Raynaud, P. Bevilacqua, S. Scharnholz, D. Planson Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12