Ar Annealing at 1600℃ and 1650℃ of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature

Ar Annealing at 1600℃ and 1650℃ of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature

著者名:

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

625

終了ページ:

628

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

類似資料:

1 国際会議録 Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient Nipoti, R., Bergamini, F., Moscatelli, F., Poggi, A., Canino, M., Bertuccio, G. Trans Tech Publications	7 国際会議録 Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer Moscatelli, F., Scorzoni, A., Poggi, A., Canino, M., Nipoti, R. Trans Tech Publications
2 国際会議録 n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature Canino, M., Castaldini, A., Cavallini, A., Moscatelli, F., Nipoti, R., Poggi, A. Trans Tech Publications	8 国際会議録 Al⁺ Implanted 4H-SiC p⁺-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation U. Grossner, F. Moscatelli, R. Nipoti Trans Tech Publications
3 国際会議録 J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600℃ Bergamini, F., Rao, S. P., Saddow, S. E., Nipoti, R. Trans Tech Publications	9 国際会議録 Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs F. Moscatelli, A. Poggi, S. Solmi, R. Nipoti, A. Armigliato Trans Tech Publications
4 国際会議録 Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+n 4H-SiC Diodes F. Moscatelli, F. Bergamini, A. Poggi, M. Passini, F. Tamarri Trans Tech Publications	10 国際会議録 C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al⁺ Implanted JTE p⁺n 4H-SiC Diodes F. Fabbri, F. Moscatelli, A. Poggi, R. Nipoti, A. Cavallini Trans Tech Publications
5 国際会議録 SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature Poggi, A., Nipoti, R., Moscatelli, F., Cardinali, G.C., Canino, M. Trans Tech Publications	11 国際会議録 Ion Implanted p+/n 4H-SiC Junctions: Effect of the Heating Rate During Post Implantation Annealing Roberta Nipoti, Alberto Carnera, Fabio Bergamini, Mariaconcetta Canino, Antonella Poggi, Sandro Solmi, Mara Passini Materials Research Society
6 国際会議録 Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes Canino, M., Castaldini, A., Cavallini, A., Moscatelli, F., Nipoti, R., Poggi, A. Trans Tech Publications	12 国際会議録 Effects of Very High Neutron Fluence Irradiation on p+n Junction 4H-SiC Diodes F. Moscatelli, A. Scorzoni, A. Poggi, M. Passini, G. Pizzocchero, R. Nipoti Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12