Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects

Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects

著者名:

Gali, A.

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

519

終了ページ:

522

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

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1 国際会議録 Theoretical Investigation of an Intrinsic Defect in SiC Gali, A., Deak, P., Son, N.T., Janzen, E. Trans Tech Publications	7 国際会議録 Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC Aradi, B., Gali, A., Deak, P., Son, N.T., Janzen, E. Trans Tech Publications
2 国際会議録 Theoretical Investigation of an Intrinsic Defect in SiC Gali, A., Deak, P., Son, N.T., Janzen, E. Trans Tech Publications	8 国際会議録 A Theoretical Study on Aluminium-Related Defects in SiC T. Hornos, A. Gali, N.T. Son, E. Janzen Trans Tech Publications
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