M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate

M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate

著者名:

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

497

終了ページ:

500

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

類似資料:

1 国際会議録 Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC Galeckas, A., Kortegaard Nielsen, H., Linnros, J., Hallen, A., Svensson, B. G., Pirouz, P. Trans Tech Publications	7 国際会議録 Channeling Measurements of Ion Implantation Damage in 4H-SiC Kuznetsov, A.Yu., Janson, M.S., Hallen, A., Svensson, B.G., Jagadish, C., Gruenleitner, H., Pensl, G. Trans Tech Publications
2 国際会議録 Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy Leveque, P., Martin, D., Svensson, B.G., Hallen, A. Trans Tech Publications	8 国際会議録 Damage Evolution in Al-implanted 4H SiC Hallen, A., Persson, P. O. A., Kuznetsov, A. Yu., Hultman, L., Svensson, B. G. Trans Tech Publications
3 国際会議録 Implantation Temperature Dependent Deep Level Defects in 4H-SiC Aberg, D., Storasta, L., Hallen, A., Svensson, B.G. Trans Tech Publications	9 国際会議録 Ion Implantation Processing and Related Effects in SiC Svensson, B.G., Hallen, A., Wong-Leung, J., Janson, M.S., Linnarsson, M.K., Kuznetsov, A.Yu., Alfieri, G., Grossner, U., … Trans Tech Publications
4 国際会議録 Dissociation of Deuterium-Defect Complexes in Ion-Implanted Epitaxial 4H-SiC Janson, M., Linnarsson, M. K., Hallen, A., Svensson, B. G. MRS - Materials Research Society	10 国際会議録 Formation and Annihilation of Carbon Vacancies in 4H-SiC H.M. Ayedh, V. Bobal, R. Nipoti, A. Hallén, B.G. Svensson Trans Tech Publications
5 国際会議録 Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC David, M.L., Alfieri, G., Monakhov, E.V., Hallen, A., Barbot, J.F., Svensson, B.G. Trans Tech Publications	11 国際会議録 Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment H.M. Ayedh, R. Nipoti, A. Hallén, B.G. Svensson Trans Tech Publications
6 国際会議録 Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments H.M. Ayedh, N. Iwamoto, R. Nipoti, A. Hallén, B.G. Svensson Trans Tech Publications	12 国際会議録 Dll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC Carlsson, F.H.C., Sridhara, S.G., Hallen, A., Bergman, J.P., Janzen, E. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12