Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 483-485
- 発行年:
- 2005
- 開始ページ:
- 323
- 終了ページ:
- 326
- 総ページ数:
- 4
- 出版情報:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499632 [0878499636]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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2
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Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions
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国際会議録
Homoepitaxial Growth and Characterization of Thick SiC Layers With a Reduced Micropipe Density
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