SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design

SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design

著者名:

Kim, J. G.

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

47

終了ページ:

52

総ページ数:

6

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

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1 国際会議録 High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design Ku, K.R., Kim, J.G., Seo, J.D., Lee, J.Y., Kyun, M.O., Lee, W.J., Lee, G.H., Kim, I.S., Shin, B.C. Trans Tech Publications	7 国際会議録 SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties C.K. Park, G.S. Lee, J.Y. Lee, M.O. Kyun, W.J. Lee, B.C. Shin, S. Nishino Trans Tech Publications
2 国際会議録 An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method J.D. Seo, J.H. An, J.G. Kim, J.K. Kim, M.O. Kyun, W.J. Lee, I.S. Kim, B.C. Shin, K.R. Ku Trans Tech Publications	8 国際会議録 Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor Transport Um, M. Y., Song, H. K., Na, H. J., Kim, D. H., Song, I. B., Jung, S. Y., Jeong, J. K., Lee, J. B., Kim, H. J. Trans Tech Publications
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4 国際会議録 Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter J.H. Park, T.K. Yang, I.S. Kim, W.J. Lee, I.G. Yeo Trans Tech Publications	10 国際会議録 Effect of TaC-Coated Crucible on SiC Single Crystal Growth D.H. Lee, H.T. Lee, B.J. Bae, H.J. Lee, S.I. Lee Trans Tech Publications
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6 国際会議録 Effect of Various Crucibles for High Quality AIN Crystal Growth on SiC Seed by PVT Method H.J. Lee, H.T. Lee, H.W. Shin, M.S. Park, Y.S. Jang Trans Tech Publications	12 国際会議録 The Role of Porous Graphite Plate for High Quality SiC Crystal Growth by PVT Method H.W. Shin, H.J. Lee, H.J. Kim, D.H. Lee, M.S. Park Trans Tech Publications

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