Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC

Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC

著者名:

Siche, D.

掲載資料名:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

483-485

発行年:

2005

開始ページ:

39

終了ページ:

42

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014242
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2004 : 5th
会議開催地:	Bologna, Italy
会議開催年:	2004.08.31-2004.09.04

類似資料:

1 国際会議録 Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport Rost, H.-J., Irmscher, K., Doerschel, J., Siche, D., Schulz, D., Wollweber, J. Trans Tech Publications	7 国際会議録 Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals Rost, H.-J., Dolle, J., Doerschel, J., Siche, D., Schulz, D., Wollweber, J. Trans Tech Publications
2 国際会議録 Growth Induced Stacking Fault Formation in 4H-SiC D. Siche, M. Albrecht, H.J. Rost, A. Sendzik Trans Tech Publications	8 国際会議録 Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals Wollweber, J., Rost, H.-J., Schulz, D., Siche, D. Trans Tech Publications
3 国際会議録 Investigation of Silicon Carbide Physical Vapor Transport Growth on the C-Terminated Face of 6H Seeds Schulz, D., Doerschel, J., Irmscher, K., Rost, H.-J., Siche, D., Wollweber, J. Materials Research Society	9 国際会議録 Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals Wollweber, J., Rost, H.-J., Schulz, D., Siche, D. Trans Tech Publications
4 国際会議録 Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT Schulz, D., Irmscher, K., Dolle, J., Eiserbeck, W., Muller, T., Rost, H. -J., Siche, D., Wagner, G., Wollweber, J. Trans Tech Publications	10 国際会議録 The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals Rost, H.J., Schmidbauer, M., Siche, D. Trans Tech Publications
5 国際会議録 Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes Rost, H.-J., Doerschel, J., Schulz, D., Siche, D., Wollweber, J. Trans Tech Publications	11 国際会議録 On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates Schulz, D., Lechner, M., Rost, H.-J., Siche, D., Wollweber, J. Trans Tech Publications
6 国際会議録 Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes Rost, H.-J., Doerschel, J., Schulz, D., Siche, D., Wollweber, J. Trans Tech Publications	12 国際会議録 Source Material Related Distribution of Defects in 6H-SiC Single Crystals Rost, H.-J, Siche, D., Dolle, J., Schulz, D., Wollweber, J. Trans Tech Publications

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