Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN

Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN

著者名:

Suvkhanov, A.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

1615

終了ページ:

1618

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Doping of GaN by Ion Implantation: Does it Work? Suvkhanov, A., Hunn, J., Wu, W., Thomson, D., Price, K., Parikh, N., Irene, E., Davis, R. F., Krasnobaev, L. MRS - Materials Research Society	7 国際会議録 Photoluminescence characterization of Mg implanted GaN Ronning, C., Hofsass, H. C., Stotzler, A., Deicher, M., Carlson, E. P., Hartlieb, P. J., Gehrke, T., Rajagopal, P., … MRS-Materials Research Society
2 国際会議録 Reverse-Annealing Phenomenon During the High-Temperature Implantation of Ar Ions into GaN Usov, Igor O., Parikh, Nalin R., Thomson, Darren, Davis, Robert F. Materials Research Society	8 国際会議録 Optical Characterization of Acceptor Implantation in GaN Skromme, B.J., Martinez, G.L., Suvkhanov, A., Krasnobaev, L., Poker, D.B. Electrochemical Society
3 国際会議録 Characterization of Be-Implanted GaN Annealed at High Temperatures Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., Davis, R. F. MRS - Materials Research Society	9 国際会議録 Damage Mechanisms of Ion Implanted Bulk(0001) ZnO Single Crystals Adekore, B.T., Usov, I., Patuaik, B., Parikh, N., Davis, R.F Materials Research Society
4 国際会議録 ACCUMULATION OF IMPLANTATION DAMAGE IN MeV IMPLANTED DIAMOND CRYSTALS Hunn, John D., Withrow, S. P., Clausing, R. E., Heatherly, L., Bentley, J., Hembree, D. M., Jr., Parikh, N. R. MRS - Materials Research Society	10 国際会議録 Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Davis, R. F. MRS - Materials Research Society
5 国際会議録 Formation of a Buried Soft Layer in SiC for "Compliant Substrate" by Ion Implantation Lioubtchenko, M., Hunn, J., Suvkhanov, A., Parikh, N., Bray, D. MRS - Materials Research Society	11 国際会議録 Post-Implant Anneal: Fundamental Differences in Dopant Diffusion and Activation Due to Rapid Thermal Annealing/Furnace Annealing Choi, P.S., Sn, T., Chang, R.D., Kwong, D.L. Electrochemical Society
6 国際会議録 Electrical Characteristics of A New Ni-MPS Rectifier Usov, i.O., Parikh, N.R., Thomson, D., Reitmeier, Z., Davis, R.F. Electrochemical Society	12 国際会議録 Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques Linthicum, K. J., Gehrke, T., Thomson, D. B., Tracy, K. M., Carlson, E. P., Smith, T. P., Zheleva, T. S., Zorman, C. A., … MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12