Nitrogen vs. Phosphorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC

Nitrogen vs. Phosphorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

1279

終了ページ:

1282

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

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1 国際会議録 Design and Implementation of RESURF MOSFETs in 4H-SiC Banerjee, S., Chatty, K., Chow, T.P., Gutmann, R.J. Trans Tech Publications	7 国際会議録 Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs Chatty, K., Banerjee, S., Chow, T.P., Gutmann, R.J., Arnold, E., Alok, D. Trans Tech Publications
2 国際会議録 Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers Chatty, K., Khemka, V., Chow, T. P., Gutmann, R. J. Trans Tech Publications	8 国際会議録 Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs Chatty, K., Banerjee, S., Chow, T.P., Gutmann, R.J. Trans Tech Publications
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