Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes

Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes

著者名:

Wahab, Q.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

1175

終了ページ:

1178

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 High-Voltage(>2.5kV)4H-SiC Schottky Reetifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers Kimoto,T., Wahab,Q., Ellison,A., Forsberg,U., Tuominen,M., Yakimova,R., Henry,A., Janzen,E. Trans Tech Publications	7 国際会議録 Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD Ellison,A., Kimoto,T., Ivanov,I.G., Wahab,Q., Henry,A., Kordina,O., Zhang,J., Hemmingsson,C.G., Gu,C.-Yu., Leys,M.R., … Trans Tech Publications
2 国際会議録 Growth of High Quality p-Type 4H-SiC Substrates by HTCVD Sundqvist, B., Ellison, A., Jonsson, A., Henry, A., Hallin, C., Bergman, J.P., Magnusson, B., Janzen, E. Trans Tech Publications	8 国際会議録 Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes Liu, J.Q., Skowronski, M., Hallin, C., Soderholm, R., Lendenmann, H. Trans Tech Publications
3 国際会議録 Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films Wahab, Q., Ellison, A., Zhang, J., Forsberg, U., Duranova, E., Henry, A., Madsen, L. D., Janzen, E. Trans Tech Publications	9 国際会議録 Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes Liu, J.Q., Skowronski, M., Hallin, C., Soederholm, R., Lendenmann, H. Trans Tech Publications
4 国際会議録 Electroluminescence from 4H-SiC Schottky Diodes Carlsson, F.H.C., ul-Wahab, Q., Bergman, P.J., Janzen, E. Materials Research Society	10 国際会議録 Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD Hallin, C., Wahab, Q., Ivanov, I., Bergman, P., Janzen, E. Trans Tech Publications
5 国際会議録 Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing Wahab, Q.u., Macak, E.B., Zhang, J., Madsen, L.D., Janzen, E. Trans Tech Publications	11 国際会議録 Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations Zhang, J., Ellison, A., Danielsson, Oe., Henry, A., Janzen, E. Trans Tech Publications
6 国際会議録 Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments Ellison, A., Zhang, J., Magnusson, W., Henry, A., Wahab, Q., Bergman, J. P., Hemmingsson, C., Son, N. T., Janzen, E. Trans Tech Publications	12 国際会議録 Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization Bishop, S.M., Preble, E.A., Hallin, C., Henry, A., Storasta, L., Jacobson, H., Wagner, B.P., Reitmeier, Z.J., Janzen, … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12