Selective Doping of 6H-SiC by Diffusion of Boron

Selective Doping of 6H-SiC by Diffusion of Boron

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

945

終了ページ:

948

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Aluminum and Boron Diffusion into (1-100) Face SiC Substrates Soloviev, S.I., Gao, Y., Khlebnikov, Y., Khlebnikov, I.I., Sudarshan, T.S. Trans Tech Publications	7 国際会議録 Thick oxide layers on N and P SiC wafers by a depo-conversion technique Zhang, Q., Madangarli, V., Khlebnikov, I., Soloviev, S., Sudarshan, T. S. MRS-Materials Research Society
2 国際会議録 Aluminum and Boron Diffusion into (1-100) Face SiC Substrates Soloviev, S.I., Gao, Y., Khlebnikov, Y., Khlebnikov, I.I., Sudarshan, T. Trans Tech Publications	8 国際会議録 SiC Epitaxial Growth on Carbon Khlebnikov, I., Madangarli, V., Sudarshan, T. S. MRS - Materials Research Society
3 国際会議録 Selective Doping of 4H-SiC by Aluminum/Boron Co-Diffusion Gao, Ying, Soloviev, S.I., Wang, X., Tin, C.C., Sudarshan, T.S. Materials Research Society	9 国際会議録 Rapid Anodic Oxidation of 6H-SiC Khlebnikov,Y., Madangarli,V.P., Khan,M.A., Sudarshan,T.S. Trans Tech Publications
4 国際会議録 Correlation Between Oxide Breakdown and Defects in SiC Wafers Soloviev, S., Khlebnikov, I., Madangarli, V., Sudarshan, T. S. MRS - Materials Research Society	10 国際会議録 A Technique for Rapid Thick Film SiC Epitaxial Growth Khlebnikov, I., Sudarshan, T. S., Madangarli, V., Capano, M. A. MRS - Materials Research Society
5 国際会議録 An Analytical Study of the SiC Growth Process from Vapor Phase Cherednichenko, D. I., Khlebnikov, Y. I., Khlebnikov, I. I., Soloviev, S. I., Sudarshan, T. S. Trans Tech Publications	11 国際会議録 Oxidation of Porous 4H-SiC Substrates Soloviev, S., Das, T., Sudarshan, T.S. Trans Tech Publications
6 国際会議録 Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B Maximenko, S., Soloviev, S., Grekov, A., Bolotnikov, A., Gao, Y., Sudarshan, T. S. Trans Tech Publications	12 国際会議録 Oxidation of Porous 4H-SiC Substrates Soloviev, S., Das, T., Sudarshan, T.S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12