Metal-Contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC

Metal-Contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC

著者名:

Linnarsson, M. K.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

937

終了ページ:

940

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

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2 国際会議録 The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures Uneus, L., Nakagomi, S., Linnarsson, M., Janson, M.S., Svensson, B.G., Yakimova, R., Syvaejaervi, M., Henry, A., Janzen, … Trans Tech Publications	8 国際会議録 Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth Linnarsson, M.K., Forsberg, U., Janson, M.S., Janzen, E., Svensson, B.G. Trans Tech Publications
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6 国際会議録 Studies of the Ambient Dependent Inversion Capacitance of Catalytic Metal-Oxide-Silicon Carbide Devices Based on 6H- and 4H-SiC Material Tobias,P., Baranzahi,A., Lundstrom,I., Schoner,A., Rottner,K., Karlsson,S., Martensson,P., Spetz,A.Lloyd Trans Tech Publications	12 国際会議録 Characterization of Deep Level Defects in 4H and 6H SiC Via DLTS, SIMS and MeV E-Beam Irradiation Doyle, J. P., Aboelfotoh, M. O., Linnarsson, M. K., Svensson, B. G., Schoner, A., Nordell, N., Harris, C., Lindstrom, J. … MRS - Materials Research Society

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