High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching
- 著者名:
Saddow, S. E. Williams, J. Isaacs-Smith, T. Capano, M. Cooper, J. A. Mazzola, M. S. Hsieh, A. J. Casady, J. B. - 掲載資料名:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 338-342(2)
- 発行年:
- 2000
- 開始ページ:
- 901
- 終了ページ:
- 904
- 総ページ数:
- 4
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
6
国際会議録
J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600℃
Trans Tech Publications |
Trans Tech Publications |