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Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions

著者名:
Ohshima, T.
Uedono, A.
Itoh, H.
Yoshikawa, M.
Kojima, K.
Okada, S.
Nashiyama, I.
Abe, K.
Tanigawa, S.
Frank, T.
Pensl, G.
さらに 6 件
掲載資料名:
Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
シリーズ名:
Materials science forum
シリーズ巻号:
338-342(2)
発行年:
2000
開始ページ:
857
終了ページ:
860
総ページ数:
4
出版情報:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498543 [0878498540]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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