Physics of SiC Processing

Physics of SiC Processing

著者名:

Pensl, G.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

831

終了ページ:

836

総ページ数:

6

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility Bassler, M., Afanas'ev, V. V., Pensl, G., Schulz, M. Trans Tech Publications	7 国際会議録 Traps at the SiC/SiO2-Interface Pensl, Gerhard, Bassler, Michael, Ciobanu, Florin, Afanas'ev, Valeri, Yano, Hiroshi, Kimoto, Tsunenobu, Matsunami, … Materials Research Society
2 国際会議録 Interface State Density at Implanted 6H SiC/SiO2 MOS Structures Bassler,M., Afanas'ev,V.V., Pensl,G. Trans Tech Publications	8 国際会議録 SiC/SiO2 Interface States: Properties and Models Afanas'ev, V. V., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A. Trans Tech Publications
3 国際会議録 Oxidation of Silicon Carbide: Problems and Solutions Afanas'ev, V.V., Bassler, M., Pensl, G., Stesmans, A. Trans Tech Publications	9 国際会議録 Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation Ciobanu, F., Pensl, G., Afanas'ev, V., Schoner, A. Trans Tech Publications
4 国際会議録 Oxidation of Silicon Carbide: Problems and Solutions Afanas'ev, V.V., Bassler, M., Pensl, G., Stesmans, A. Trans Tech Publications	10 国際会議録 Beryllium-Related Defect Centers in 4H-SiC Krieger, M., Laube, M., Weidner, M., Pensl, G. Trans Tech Publications
5 国際会議録 Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces Ciobanu, F., Frank, T., Pensl, G., Afanas'ev, V., Shamuilia, S., Schoner, A., Kimoto, T. Trans Tech Publications	11 国際会議録 Low Temperature Photoluminescence Processes of 13C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method Sadowski, H., Schulze, N., Frank, T., Laube, M., Pensl, G., Helbig, R. Trans Tech Publications
6 国際会議録 Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum T. Frank, S. Beljakowa, G. Pensl, T. Kimoto, V. Afanas'ev Trans Tech Publications	12 国際会議録 Transient-Enhanced Diffusion of Boron in SiC Laube, M., Pensl, G. Trans Tech Publications

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