Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance

Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance

著者名:

Son, N. T.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

5663

終了ページ:

566

総ページ数:

-5096

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance Son, N.T., Hallin, C., Janzen, E. Trans Tech Publications	7 国際会議録 A deep photoluminescence band in 4H SiC related to the silicon vacancy Sorman,E., Son,N.T., Chen,W.M., Hallin,C., Lindstrom,J.L., Janzen,E. Trans Tech Publications
2 国際会議録 Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance Son, N.T., Hallin, C., Janzen, E. Trans Tech Publications	8 国際会議録 Optically Detected Cyclotron Resonance for Defect Characterization Godlewski,M., Chen,W.M., Monemar,B. Trans Tech Publications
3 国際会議録 Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations Meyer, B. K., Hofmann, D. M., Volm, D., Chen, W. M., Son, N. T., Janzen, E. Trans Tech Publications	9 国際会議録 Chromium in 4H and 6H SiC:Photcluminescence and Zeeman Studies Son,N.T., Ellison,A., MacMillan,M.F., Kordina,O., Chen,W.M., Monemar,B., Janzen,E. Trans Tech Publications
4 国際会議録 The Neutral Silicon Vacancy in 6H and 4H SiC Sorman,E., Chen,W.M., Son,N.T., Hallin,C., Lindstrom,J.L., Monemar,B., Janzen,E. Trans Tech Publications	10 国際会議録 Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC Zolnai, Z., Son, N.T., Magnusson, B., Hallin, C., Janzen, E. Trans Tech Publications
5 国際会議録 The Carbon Vacancy Pair in 4H and 6H SiC Son, N. T., Hai, P. N., Shuja, A., Chen, W. M., Lindstrom, J. L., Monemar, A., Janzen, E. Trans Tech Publications	11 国際会議録 The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction Wagner, Mt., Thinh, N.Q., Son, N.T., Baranov, P.G., Mokhov, E.N., Hallin, C., Chen, W.M., Janzen, E. Trans Tech Publications
6 国際会議録 Optically Detected Wagnetic Resotrance Studies of Non-Radiative Recombination Centres in 6H SiC Son,N.T., Wagner,Mt., Sorman,E., Chen,W.M., Monemar,B., Janzen,E. Trans Tech Publications	12 国際会議録 The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction Wagner, Mt., Thinh, N.Q., Son, N.T., Baranov, P.G., Mokhov, E.N., Hallin, C., Chen, W.M., Janzen, E. Trans Tech Publications

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