Confocal Raman Microprobe of Lattice Damage in N+ Implanted 6H-SiC

Confocal Raman Microprobe of Lattice Damage in N+ Implanted 6H-SiC

著者名:

Mestres, N.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

663

終了ページ:

666

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Analysis of Aluminum Ion Implantation Damage into 6H-SiC Epilayers Mestres,N., Mekki,M.Ben El, Campos,F.J., Pascual,J., Morvan,E., Godignon,P., Millan,J., Lulli,G. Trans Tech Publications	7 国際会議録 *CuPt ordering signatures of phonons in GaInP2 Alsina, F., Cheong, H. M., Mestres, N., Pascual, J., Mascarenhas, A. MRS-Materials Research Society
2 国際会議録 Damage Reduction in Channeled Ion Implanted 6H-SiC Morvan, E., Mestres, N., Campos, F. J., Pascual, J., Anders, Hallen, Linnarsson, M. K., Kuznetsov, A. Yu. Trans Tech Publications	8 国際会議録 4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric Perez-Tomas, A., Godignon, P., Mestres, N., Montserrat, J., Millan, J. Trans Tech Publications
3 国際会議録 Infrared Investigation of Implantation Damage in 6H-SiC Camassel, J., Wang, H., Pernot, J., Godignon, P., Mestres, N., Pascual, J. Trans Tech Publications	9 国際会議録 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O Perez-Tomas, A., Tournier, D., Godignon, P., Mestres, N., Millan, J. Trans Tech Publications
4 国際会議録 Infrared Investigation of Implantation Damage in 6H-SiC Camassel, J., Wang, H., Pernot, J., Godignon, P., Mestres, N., Pascual, J. Trans Tech Publications	10 国際会議録 Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals Blanque, S., Perez, R., Godignon, P., Mestres, N., Morvan, E., Kerlain, A., Dua, C., Brylinski, C., Zielinski, M., … Trans Tech Publications
5 国際会議録 Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N+ and P+ Ions in 6H-SiC Blanque, S., Perez, R., Zielinski, M., Pernot, J., Mestres, N., Pascual, J., Godignon, P., Camassel, J. Trans Tech Publications	11 国際会議録 Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation Blanque, S., Lyonnet, J., Camassel, J., Perez, R., Terziyska, P., Contreras, S., Godignon, P., Mestres, N., Pascual, J. Trans Tech Publications
6 国際会議録 SiC Base Micro-Probe for Myocardial Ischemia Monitoring Pascual, J., Valvo, F., Godignon, P., Aguilo, J., Millan, J., Camassel, J., Mestres, N. Trans Tech Publications	12 国際会議録 Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction Camassel, J., Peyre, H., Brink, D.J., Zielinski, M., Blanque, S., Mestres, N., Godignon, P. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12