Photoluminescence and DLTS Measurements of 15 MeV Erbium Implanted 6H and 4H SiC

Photoluminescence and DLTS Measurements of 15 MeV Erbium Implanted 6H and 4H SiC

著者名:

Shishkin, Y.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

639

終了ページ:

642

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

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1 国際会議録 Optical Lifetime Measurements in 4H SiC Shishkin, Y., Devaty, R. P., Choyke, W. J. Trans Tech Publications	7 国際会議録 Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC Grillenberger, J., Achtziger, N., Pasold, G., Witthuhn, W. Trans Tech Publications
2 国際会議録 Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC Frank, T., Pensl, G., Bai, S., Devaty, R. P., Choyke, W. J. Trans Tech Publications	8 国際会議録 Radiotracer Identification of Ti,V and Cr Band Gap States in 4H- and 6H-SiC Achtziger,N., Grillenberger,J., Witthuhn,W. Trans Tech Publications
3 国際会議録 1.54 ｦﾌm Photoluminescence and Electroluminescence in Erbium Implanted 6H SiC Yoganathan, M., Choyke, W. J., Devaty, R. P., Pensl, G., Edmond, J. A. MRS - Materials Research Society	9 国際会議録 EPR Studies of SiCISiO2 Interfaces in n-type 4H-and 6H- Oxidized Porous SIC von Bardeleben, H.J., Cantin, J.L., Mynbaeva, M., Saddow, S.E., Shishkin, Y., Devaty, R.P., Choyke, W.J. Electrochemical Society
4 国際会議録 Porous Structure of Anodized p-Type 6H SiC Shishkin, Y., Ke, Y., Devaty, R.P., Choyke, W.J. Trans Tech Publications	10 国際会議録 Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC Yan, F., Devaty, R. P., Choyke, W. J., Gali, A., Schmid, F., Pensl, G., Wagner, G. Trans Tech Publications
5 国際会議録 Triangular Pore Formation in Highly Doped n-Type 4H SiC Shishkin, Y., Choyke, W.J., Devaty, R.P. Trans Tech Publications	11 国際会議録 CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates Shishkin, Y., Ke, Y., Yan, F., Devaty, R.P., Choyke, W.J., Saddow, S.E. Trans Tech Publications
6 国際会議録 Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC Grillenberger, J., Achtziger, N., Pasold, G., Witthuhn, W. Trans Tech Publications	12 国際会議録 Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC von Bardeleben, H.J., Cantin, J.L., Shishkin, Y., Devaty, R.P., Choyke, W.J. Trans Tech Publications

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