Isotope Effects on the Raman Spectrum of SiC

Isotope Effects on the Raman Spectrum of SiC

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

579

終了ページ:

582

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC Rohmfeld, S., Hundhausen, M., Ley, L., Schulze, N., Pensl, G. Trans Tech Publications	7 国際会議録 Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy Puesche, R., Hundhausen, M., Ley, L., Semmelroth, K., Schmid, F., Pensl, G., Nagasawa, H. Trans Tech Publications
2 国際会議録 Disappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiC Pusche, R., Rohmfeld, S., Hundhausen, M., Ley, L. Trans Tech Publications	8 国際会議録 Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy Steeds, J.W., Evans, G.A., Furkert, S., Ley, L., Hundhausen, M., Schulz, N., Pensl, G. Trans Tech Publications
3 国際会議録 Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy Herzog, B., Rohmfeld, S., Pusche, R., Hundhausen, M., Ley, L., Semmelroth, K., Pensl, G. Trans Tech Publications	9 国際会議録 Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC Pusche, R., Hundhausen, M., Ley, L. Trans Tech Publications
4 国際会議録 Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy Herzog, B., Rohmfeld, S., Pusche, R., Hundhausen, M., Ley, L., Semmelroth, K., Pensl, G. Trans Tech Publications	10 国際会議録 Growth of 3C-SiC Bulk Material by the Modified Lely Method Semmelroth, K., Krieger, M., Pensl, G., Nagasawa, H., Puesche, R., Hundhausen, M., Ley, L., Nerding, M., Strunk, H.P. Trans Tech Publications
5 国際会議録 Raman Spectroscopy on Biaxially Strained Epitaxial Layers of 3C-SiC on Si Rohmfeld, S., Hundhausen, M., Ley, L., Zorman, C. A., Mehregany, M. Trans Tech Publications	11 国際会議録 Electronic Raman Studies of Shallow Donors in Silicon Carbide Pusche, R., Hundhausen, M., Ley, L., Semmelroth, K., Pensl, G., Desperrier, P., Wellmann, P.J., Haller, E.E., Ager, … Trans Tech Publications
6 国際会議録 Contactless Measurement of the Thermal Conductivity of Thin SiC Layers Rohmfeld,S., Hundhausen,M., Ley,L. Trans Tech Publications	12 国際会議録 High Resolution Photoemission Study of the 6H-SiC/SiO2 Interface Mattern,B., Bassler,M., Pensl,G., Ley,L. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12