Differential Absorption Measurement of Valence Band Splittings in 4H SiC

Differential Absorption Measurement of Valence Band Splittings in 4H SiC

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

567

終了ページ:

570

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC Sridhara, S. G., Bai, S., Shigiltchoff, O., Devaty, R. P., Choyke, W. J. Trans Tech Publications	7 国際会議録 Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells Bai, S., Devaty, R.P., Choyke, W.J., Kaiser, U., Wagner, G., MacMillan, M.F. Trans Tech Publications
2 国際会議録 Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy Devaty, R.P., Bai, S., Choyke, W.J., Hobgood, D., Larkin, D.J. Trans Tech Publications	8 国際会議録 Photoluminescence Study of C-H and C-D Centers in 4H SiC Bai, S., Yan, F., Devaty, R.P., Choyke, W.J., Grotzschel, R., Wagner, G., MacMillan, M.F. Trans Tech Publications
3 国際会議録 Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission Shigiltchoff, O., Bai, S., Devaty, R.P., Choyke, W.J., Kimoto, T., Hobgood, D., Neudeck, P.G., Porter, L.M. Trans Tech Publications	9 国際会議録 New Evidence for the Second Conduction Band in 4H SiC W. Klahold, C. Tabachnick, G. Freedman, R.P. Devaty, W.J. Choyke Trans Tech Publications
4 国際会議録 Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC Sridhara,S.G., Nizhner,D.G., Devaty,R.P., Choyke,W.J., Troffer,T., Pensl,G., Larkin,D.J., Kong,H.S. Trans Tech Publications	10 国際会議録 Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiC Bai, S., Choyke, W.J., Devaty, R.P. Trans Tech Publications
5 国際会議録 Optical Lifetime Measurements in 4H SiC Shishkin, Y., Devaty, R. P., Choyke, W. J. Trans Tech Publications	11 国際会議録 Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor Bai, S., Wagner, G., Shishkin, E., Choyke, W.J., Devaty, R.P., Zhang, M., Pirouz, P., Kimoto, T. Trans Tech Publications
6 国際会議録 Dn Revisited in an Modern Guise-6H and 4H SiC Sridhara,S.G., Nizhner,D.G., Devaty,R.P., Choyke,W.J., Dalibor,T., Pensl,G., Kimoto,T. Trans Tech Publications	12 国際会議録 Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor Bai, S., Wagner, G., Shishkin, E., Choyke, W.J., Devaty, R.P., Zhang, M., Pirouz, P., Kimoto, T. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12