Characterization of Polycrystalline SiC Grown on SiO2 and Si3N4 by APCVD for MEMS Applications

Characterization of Polycrystalline SiC Grown on SiO2 and Si3N4 by APCVD for MEMS Applications

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

541

終了ページ:

544

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

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5 国際会議録 A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si Wu, C.H., Chung, J., Hong, M.H., Zorman, C.A., Pirouz, P., Mehregany, M. Trans Tech Publications	11 国際会議録 Bulk Micromachining of Polycrystalline SiC Using Si Molds Fabricated by Deep Reactive Ion Etching Rajan, N., Zorman, C. A., Mehregany, M. Trans Tech Publications
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