Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC

Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC

著者名:

Zangooie, S.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

537

終了ページ:

540

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC Persson,P.O.A., Wahab,Q., Hultman,L., Nordell,N., Schoner,A., Rottner,K., Olsson,E., Linnarsson,M.K. Trans Tech Publications	7 国際会議録 Damage Evolution in Al-implanted 4H SiC Hallen, A., Persson, P. O. A., Kuznetsov, A. Yu., Hultman, L., Svensson, B. G. Trans Tech Publications
2 国際会議録 Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes Zangooie, S., Arwin, H., Lundstrom, I., Spetz, A. L. Trans Tech Publications	8 国際会議録 Optical Characterization of 4H-SiC by Variable Angle of Incidence Spectroscopic Ellipsometry Lindquist, O. P. A., Arwin, H., Forsberg, U., Bergman, J. P., Jarrendahl, K. Trans Tech Publications
3 国際会議録 Electrochemical Tailoring and Optical Investigation of Advanced Refractive Index Profiles in Porous Silicon Layers Arwin, H., Jansson, R., Zangooie, S. Materials Research Society	9 国際会議録 Structural Defects in Electrically Degraded 4H-SiC PiN Diodes Persson, P.O.A., Jacobson, H., Molina-Aldareguia, J.M., Bergman, J.P., Tuomi, T., Clegg, W.J., Janzen, E., Hultman, L. Trans Tech Publications
4 国際会議録 Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC Persson, P.O.A., Hultman, L. Trans Tech Publications	10 国際会議録 Structural Defects in Electrically Degraded 4H-SiC PiN Diodes Persson, P.O.A., Jacobson, H., Molina-Aldareguia, J.M., Bergman, J.P., Tuomi, T., Clegg, W.J., Janzen, E., Hultman, L. Trans Tech Publications
5 国際会議録 Microstructural Analysis and Modelling of Thin Porous Silicon Layers with Variable Angle Spectroscopic Ellipsometry Pettersson, L. A. A., Zangooie, S., Bjorklund, R., Arwin, H. MRS - Materials Research Society	11 国際会議録 Precipitate Formation in Heavily Al-Doped 4H-SiC Layers Linnarsson, M.K., Persson, P.O.A., Bleichner, H., Janson, M., Zimmermann, U., Andersson, H., Karlsson, S., Yakimova, R., … Trans Tech Publications
6 国際会議録 Low-Energy-Ion-Assisted Reactive Sputter Deposition of Epitaxial AIN Thin Films on 6H-SiC Tungasmita, S., Persson, P. O. A., Jarrendahl, K., Hultman, L., Birch, J. Trans Tech Publications	12 国際会議録 Growth of Epitaxial (SiC)x(AlN)1-x Thin Films on 6H-SiC by Ion-Assisted Dual Magnetron Sputter Deposition Tungasmita, S., Persson, P.O.A., Seppaenen, T., Hultman, L., Birch, J. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12