Crystal Growth of 15R-SiC Boules by Sublimation Method

Crystal Growth of 15R-SiC Boules by Sublimation Method

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

115

終了ページ:

118

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates Nishino, S., Nishiguchi, T., Masuda, Y., Sasaki, M., Ohshima, S. Materials Research Society	7 国際会議録 Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy Takagi, H., Nishiguchi, T., Ohta, S., Furusho, T., Ohshima, S., Nishino, S. Trans Tech Publications
2 国際会議録 Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method Okada, S., Nishiguchi, T., Shimizu, T., Sasaki, M., Oshima, S., Nishino, S. Trans Tech Publications	8 国際会議録 Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering Kurimoto, E., Hangyo, M., Harima, H., Kisoda, K., Nishiguchi, T., Nishino, S., Nakashima, S., Katsuno, M., Ohtani, N. Trans Tech Publications
3 国際会議録 Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique Nishiguchi, T., Nakamura, M., Isshiki, T., Ohshima, S., Nishino, S. Trans Tech Publications	9 国際会議録 Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates Nishiguchi, T., Masuda, Y., Ohshima, S., Nishino, S. Trans Tech Publications
4 国際会議録 Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC Tanaka, H., Nishiguchi, T., Sasaki, M., Ohshima, S., Nishino, S. Trans Tech Publications	10 国際会議録 Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates Nishiguchi, T., Masuda, Y., Ohshima, Satoru, Nishino, S. Trans Tech Publications
5 国際会議録 Crystal Growth of 15R-SiC and Various Polytype Substrates Nishiguchi, T., Shimizu, T., Sasaki, M., Oshima, S., Nishino, S. Trans Tech Publications	11 国際会議録 Characterization of 2 Inch SiC Wafers Made by the Sublimation Method Sasaki, M., Shiomi, H., Nishino, S. Trans Tech Publications
6 国際会議録 Mechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation Method Shimizu, T., Nishiguchi, T., Sasaki, M., Ohshima, S., Nishino, S. Trans Tech Publications	12 国際会議録 Observation of Planar Defects in 2-inch SiC Wafer Tanaka, H., Nishiguchi, T., Sasaki, M., Nishino, S. Trans Tech Publications

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