Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT

Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT

著者名:

Schulz, D.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

87

終了ページ:

90

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport Rost, H.-J., Irmscher, K., Doerschel, J., Siche, D., Schulz, D., Wollweber, J. Trans Tech Publications	7 国際会議録 Investigation of Silicon Carbide Physical Vapor Transport Growth on the C-Terminated Face of 6H Seeds Schulz, D., Doerschel, J., Irmscher, K., Rost, H.-J., Siche, D., Wollweber, J. Materials Research Society
2 国際会議録 Source Material Related Distribution of Defects in 6H-SiC Single Crystals Rost, H.-J, Siche, D., Dolle, J., Schulz, D., Wollweber, J. Trans Tech Publications	8 国際会議録 Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes Rost, H.-J., Doerschel, J., Schulz, D., Siche, D., Wollweber, J. Trans Tech Publications
3 国際会議録 Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals Rost, H.-J., Dolle, J., Doerschel, J., Siche, D., Schulz, D., Wollweber, J. Trans Tech Publications	9 国際会議録 Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes Rost, H.-J., Doerschel, J., Schulz, D., Siche, D., Wollweber, J. Trans Tech Publications
4 国際会議録 Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals Wollweber, J., Rost, H.-J., Schulz, D., Siche, D. Trans Tech Publications	10 国際会議録 Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC Siche, D., Albrecht, M., Doerschel, J., Irmscher, K., Rost, H. J., Rossberg, M., Schulz, D. Trans Tech Publications
5 国際会議録 Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals Wollweber, J., Rost, H.-J., Schulz, D., Siche, D. Trans Tech Publications	11 国際会議録 On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates Schulz, D., Lechner, M., Rost, H.-J., Siche, D., Wollweber, J. Trans Tech Publications
6 国際会議録 Morphology of Sublimation Grown 6H-SiC(000-1) Surfaces Schulz, D., Dolle, J., Rost, H.-J, Siche, D., Wollweber, J. Trans Tech Publications	12 国際会議録 Growth of 3C SiC Single Crystals from Convection Dominated Melts Wollweber, J., Chevrier, V., Siche, D., Duffar, Th. Trans Tech Publications

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