Large Diameter PVT Growth of Bulk 6H SiC Crystals

Large Diameter PVT Growth of Bulk 6H SiC Crystals

著者名:

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(1)

発行年:

2000

開始ページ:

9

終了ページ:

12

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014226
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals Anderson, T.A., Barrett, D.L., Chen, J., Elkington, W.T., Emorhokpor, E., Gupta, A., Johnson, C.J., Hopkins, R.H., … Trans Tech Publications	7 国際会議録 Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications Hobgood, D., Brady, M., Brixius, W., Fechko, G., Glass, R., Henshall, D., Jenny, J., Leonard, R., Malta, D., Muller, St. … Trans Tech Publications
2 国際会議録 Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport Yoganathan, M., Gupta, A., Semenas, E., Emorhokpor, E., Martin, C., Kerr, T., Zwieback, I., Souzis, A.E., Anderson, … Materials Research Society	8 国際会議録 Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT Ha, S., Rohrer, G. S., Skowronski, M., Heydemann, V. D., Snyder, D. W. Trans Tech Publications
3 国際会議録 Polishing and Surface Characterization of SiC Substrates Everson, W. J., Snyder, D. W., Heydemann, V. D. Trans Tech Publications	9 国際会議録 Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT Schulz, D., Irmscher, K., Dolle, J., Eiserbeck, W., Muller, T., Rost, H. -J., Siche, D., Wagner, G., Wollweber, J. Trans Tech Publications
4 国際会議録 Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport Anderson, T., Barrett, D., Chen, J., Emorhokpor, E., Gupta, A., Hopkins, R., Souzis, A., Tanner, C., Yoganathan, M., … Trans Tech Publications	10 国際会議録 Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth Selder, M., Kadinski, L., Durst, F., Straubinger, T. L., Hofmann, D., Wellmann, P. J. Trans Tech Publications
5 国際会議録 6H and 4H-SiC Bulk Growth by PVT and Advanced PVT (APVT) Gupta, A., Yoganathan, M., Semenas, E., Zwieback, I., Emorhokpor, E., Martin, C., Kerr, T., Souzis, A., Anderson, T., … Materials Research Society	11 国際会議録 Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals Selder, M., Kadinski, L., Durst, F., Straubinger, T.L., Wellmann, P.J., Hofmann, D. Trans Tech Publications
6 国際会議録 Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates Heydemann, V.D., Everson, W.J., Gamble, R.D., Snyder, D.W., Skowronski, M. Trans Tech Publications	12 国際会議録 Growth of Bulk SiC by Halide Chemical Vapor Deposition Fanton, M., Skowronski, M., Snyder, D., Chung, H.J., Nigam, S., Weiland, B., Huh, S.W. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12