Device Processing For GaN High Power Electronics | 東京工業大学附属図書館文献データベース

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Device Processing For GaN High Power Electronics

著者名:

Pearton, Stephen J.

Abernathy, C.R.

さらに 12 件

掲載資料名:

Wide-bandgap electronic devices

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

622

発行年:

2001

開始ページ:

T7.1

出版情報:

Warrendale, PA.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995307 [1558995307]

言語:

英語

請求記号:

M23500/622

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014208
シリーズID:	PA00000011
会議名:	Sympsoium on Wide-Bandgap Electronic Devices ; MRS Spring Meeting
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.27

類似資料:

1 国際会議録 GaN Power Devices Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cac, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., … Electrochemical Society	7 国際会議録 Dielectrics for GaN-Based MIS Diodes Ren, F., Abernathy, C. R., MacKenzie, J. D., Gila, B. P., Pearton, S. J., Hong, M., Macos, M., Schurman, M. J., Baca, A. … MRS - Materials Research Society
2 国際会議録 GaN pnp Bipolar Junction Transistors Operated To 250℃ Zhang, A.P., Dang, G., Ren, F., Han, J., Monier, C., Baca, A.G., Cao, X.A., Cho, H., Abernathy, C.R., Pearton, S.J. Materials Research Society	8 国際会議録 GaN Metal Oxide Semiconductor Field Effect Transistors Ren, F., Pearton, S.J., Abernathy, C.R., Baca, A.G., Cheng, P., Han, J., Shul, R.J., Chu, S.N.G., Hong, M., Lothian, … Electrochemical Society
3 国際会議録 High density plasma damage induced in n-GaN schottky diodes using Cl2/Ar discharges Zhang, A. P., Dang, G., Ren, F., Cao, X. A., Cho, H., Lambers, E. S., Pearton, S. J., Shul, R. J., Zhang, L., Baca, A. … MRS-Materials Research Society	9 国際会議録 Comparison of Digital versus Continuous Growth Techniques for MgCaO Dielectric on GaN Onstine, A.H., Herrero, A., Gila, B.P., Stodilka, D., Abernathy, C.R., LaRoche, J., Ren, F., Pearton, S.J. Materials Research Society
4 国際会議録 *Temperature Effect of Metal contacts on GaN Ren, F., Chu, S.N.G., Lothian, J.R., Pearton, S.J., Abernathy, C.R., Baca, A.G., Han, J., Schurman, M.J., Hong, M., Cao, … Electrochemical Society	10 国際会議録 Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics Gila, B.P., Luo, B., Kim, J., Mehandru, R., LaRoche, J.R., Onstine, A.H., Abernathy, C.R., Ren, F., Pearton, S.J. Electrochemical Society
5 国際会議録 Current Gain Simulation Of Npn AlGaN/GaN Heterojunction Bipolar Transistors Monier, C., Pearton, S.J., Baca, Albert G., Chang, P.C., Zhang, L., Han, J., Shul, R.J., Ren, F., LaRoche, J. Materials Research Society	11 国際会議録 GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates Irokawa, Y., Luo, B., Kim, Jihyun, Kang, B.S., LaRoche, J.R., Ren, F, Pan, C.-C., Chen, G.T., Chyi, J.-I., Park, S.S., … Electrochemical Society
6 国際会議録 AlGaN/GaN Heterojunction Bipolar Transistor: Limiting Factors and Optimum Design for High Frequency Performances Monier, C., Baca, A.G., Pearton, S.J., Ren, F., Chang, P.C., Zhang, L., LaRoche, J.R., Han, J., Shut, R.J. Electrochemical Society	12 国際会議録 Surface conversion effects in plasma-damaged p-GaN Cao, X. A., Pearton, S. J., Dang, G. T., Zhang, A. P., Ren, F., Shul, R. J., Zhang, L., Hickman, R., Hove, J. M. Van MRS-Materials Research Society

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