TEM Study Of High Quality GaN Grown By OMVPE Using An Intermediate Layer

TEM Study Of High Quality GaN Grown By OMVPE Using An Intermediate Layer

著者名:

Benamara, Mourad

Bourret-Courchesne, E.D.

さらに 2 件

掲載資料名:

Wide-bandgap electronic devices

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

622

発行年:

2001

開始ページ:

T6.14

出版情報:

Warrendale, PA.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995307 [1558995307]

言語:

英語

請求記号:

M23500/622

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014208
シリーズID:	PA00000011
会議名:	Sympsoium on Wide-Bandgap Electronic Devices ; MRS Spring Meeting
回次:	2000
会議開催地:	San Francisco, CA, USA
会議開催年:	2000.04.24-2000.04.27

類似資料:

1 国際会議録 The role of the multi buffer layer technique on the structural quality of GaN Benamara, M., Liliental-Weber, Z., Mazur, J. H., Swider, W., Washburn, J., Iwaya, M., Akasaki, I., Amano, H. MRS-Materials Research Society	7 国際会議録 Nanotubes in GaN Liliental-Weber, Z., Chen, Y., Ruvimov, S., Swider, W., Washburn, J. MRS - Materials Research Society
2 国際会議録 TEM Study of Defects in Laterally Overgrown GaN Layers Liliental-Weber, Z., Benamara, M., Swider, W., Washburn, J., Park, J., Grudowski, P. A., Eiting, C. J., Dupuis, R. D. MRS - Materials Research Society	8 国際会議録 TEM/HREM Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire Ruvimov, S., Liliental-Weber, Z., Dieker, C., Washburn, J., Koike, M., Amano, H., Akasaki, I. MRS - Materials Research Society
3 国際会議録 TEM study of Mg-doped bulk GaN crystals Liliental-Weber, Z., Benamara, M., Ruvimov, S., Mazur, J. H., Washburn, J., Grzegory, I., Porowski, S. MRS-Materials Research Society	9 国際会議録 High Resolution TEM Studies of Defects Near Si-SiO2 Interface Mazur, J. H., Washburn, J. North-Holland
4 国際会議録 Effect of the doping and the Al content on the microstructure and morphology of thin Alx Ga1-xN layers grown by MOCVD Mazur, J. H., Benamara, M., Liliental-Weber, Z., Swider, W., Washburn, J., Eiting, C. J., Dupuis, R. D. MRS-Materials Research Society	10 国際会議録 Screw Dislocations in MBE GaN Layers Grown on Top of HVPE Layers: Are They Different? Liliental-Weber, Z., Zakharov, D., Jasinski, J., Washburn, J., O'Keefe, M.A., Morkoc, H. Materials Research Society
5 国際会議録 Polarity of GaN Liliental-Weber, Z., Benamara, M., Richter, O., Swider, W., Washburn, J., Grzegory, I., Porowski, S., Yang, J. W., … MRS - Materials Research Society	11 国際会議録 Effect of Si Doping on the Structure of GaN Liliental-Weber, Zuzanna, Ruvimov, S., Suski, T., Ager, J. W., III, Swider, W., Chen, Y., Kisielowski, Ch., Washburn, … MRS - Materials Research Society
6 国際会議録 Mg, segregation, difficulties of P-doping in GaN Liliental-Weber, Z., Benamara, M., Swider, W., Washburn, J., Grzegory, I., Porowski, S., Dupuis, R. D., Eiting, C. J. MRS-Materials Research Society	12 国際会議録 TEM Structure Characterization of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts for n-GaN Ruvimov, S., Liliental-Weber, Z., Washburn, J., Duxstad, K. J., Haller, E. E., Fan, Z.-F., Mohammad, S. N., Kim, W., … MRS - Materials Research Society

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